Silicon transistors are a critical component in most electronic devices. However, they have limitations. Expansion of silicon semiconductor technology is held back by a fundamental physical limit that prevents transistors from operating below a certain voltage. This limit, known as Boltzmann tyranny, hinders the energy efficiency of computers and other electronics, especially with the rapid development of artificial intelligence technologies that demand faster computation.
To overcome this fundamental limit of silicon, MIT researchers fabricated a different type of three-dimensional transistor using a unique set of ultrathin semiconductor materials. Their devices, featuring vertical nanowires only a few nanometres wide, can deliver performance comparable to state-of-the-art silicon transistors while operating efficiently at much lower voltages than conventional devices.
This is a technology with the potential to replace silicon so you could use it with all the functions that silicon currently has but with much better energy efficiency, says Yanjie Shao, an MIT postdoc and lead author of a paper on the new transistors.
The transistors leverage quantum mechanical properties to simultaneously achieve low-voltage operation and high performance within an area of just a few square nanometres. Their extremely small size would enable more of these 3D transistors to be packed onto a computer chip, resulting in fast, powerful electronics that are also more energy-efficient.
With conventional physics, there is only so far you can go. The work of Yanjie shows that we can do better than that but we must apply different physics. There are many challenges yet to be overcome for this approach to become commercial but, conceptually, it really is a breakthrough, says senior author Jess del Alamo, donner professor of Engineering in the MIT Department of Electrical Engineering and Computer Science EECS.
